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NTGD3133P
Power MOSFET
? 20 V, ? 2.5 A, P ? Channel, TSOP ? 6 Dual
Features
?
?
?
?
?
Reduced Gate Charge for Fast Switching
? 2.5 V Gate Rating
Leading Edge Trench Technology for Low On Resistance
Independent Devices to Provide Design Flexibility
This is a Pb ? Free Device
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) MAX
145 m W @ ? 4.5 V
I D MAX
? 2.2 A
Applications
200 m W @ ? 2.5 V
? 1.6 A
?
?
?
?
Li ? Ion Battery Charging
Load Switch / Power Switching
DC to DC Conversion
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
G1
S1
G2
S2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
? 20
± 12
Unit
V
V
D1
P ? CHANNEL MOSFET
D2
P ? CHANNEL MOSFET
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 2.2
? 1.6
A
MARKING
DIAGRAM
t ≤ 5s
T A = 25 ° C
? 2.5
1
SC = Specific Device Code
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
t p = 10 m s
P D
I D
P D
I DM
1.0
1.3
? 1.6
? 1.2
0.56
? 7.5
W
A
W
A
TSOP6
CASE 318G SC M G
STYLE 13 G
1
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
Operating Junction and Storage Temperature
T J , T STG
? 55 to
150
° C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 0.8
260
A
° C
G1
S2
1
2
6
5
D1
S1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G2
3
4
D2
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm 2 [2 oz] including traces).
(Top View)
ORDERING INFORMATION
Device
NTGD3133PT1G
Package
TSOP6
Shipping ?
3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
May, 2008 ? Rev. 1
1
Publication Order Number:
NTGD3133P/D
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相关代理商/技术参数
NTGD3133PT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
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NTGD3147FT1G 功能描述:MOSFET FETKY 20V 2.5A 145M TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD3148 制造商:ON Semiconductor 功能描述:MOSFET NN CH 20V 3.5A 6TSOP 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 20V, 3.5A, 6TSOP
NTGD3148N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6
NTGD3148NT1G 功能描述:MOSFET NFET 20V 3A 70MOHM TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD3149C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
NTGD3149CT1G 功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube